High Target Utilisation Sputtering system (HiTUS)

Experimental PVD plasma sputtering system with independent RF plasma source for thin film deposition. The high-density plasma is generated by an inductively coupled helicon discharge in the side arm of the deposition chamber. Plasma can be guided to the sputtered target or substrates. Uniform magnetic field over the target surface allows for homogeneous sputtering without formation of racetrack. Plasma generation in a separate chamber allows for independent sputtering voltage and current adjustment. Energy of ions during sputtering and substrate etching can be adjusted in wide range. Pulsed DC voltage on target in combination with inductively coupled RF plasma provides enhanced stability and reproducibility during reactive sputter deposition processes. Up to four 4" targets or six 2" targets can be selected in-situ. Various materials, including ferromagnetic metals and semiconductor compounds, can be sputtered. A rotating substrate holder (4" wafer) can be heated up to 500 °C. In-situ substrate cleaning/etching by ICP plasma and RF or DC bias can be performed. Uniform target erosion and arrangement of inert/reactive gas feeds ensure a stable reactive sputtering process. The high-density plasma can also be generated with other gases, such as N2, O2, CH4, C2H2 or even HMDSO vapours introduced into the deposition chamber from the evaporator through the heated needle valve.