Rapid thermal annealing up to 1200°C
High vacuum compliant Rapid Thermal Process Oven with ramp rate up to 150 K/sec with maximum of 1200°C. Front loading allows 100 mm single wafer processing in ambient air, high vacuum, Ar, N2, O2 or 10%H2N2. Water cooling allows longer process times up to 2h at 1000°C.
Specification
Maximum temperature
1200°C
Maximum ramp rate
150 K/sec
Processing in
ambient air, high vacuum (~10e-4 Pa), or process gases
4 gas lines controlled by mass flow controllers
Ar, N2, O2 or 10%H2N2
Chamber
quartz glass muffle (135 x 170 x 18 mm) with quartz glass holders
Graphite susceptor for small sample pieces
Heating
IR lamps, 20kW, upper and lower IR lamp fields (selectable)
Control
50 programs (max 50 steps each) controlled via touch panel (HMI)
