Martin Moško, doc. RNDr., DrSc.

Band structure of semiconductors, statistics of electrons and holes in the intrinsic and doped semiconductors, carrier scattering by impurities and lattice vibrations – carrier mobility. Conductivity of semiconductors in strong electric fields – solution of the Boltzmann transport equation by Monte Carlo simulation. Excess carriers, optical absorption, photoluminescence, carrier life time. Diffusion, drift, and recombination of excess carriers, Haynes-Shockley experiment. Equilibrium state and current-voltage characteristic of the p-n junction and Schottky junction, rectifying and ohmic Schottky junction, modulation-doped semiconductor heterojunction – two- dimensional electrons with high mobility, resonant tunneling diode. Bipolar transistor, field effect transistor, high-electron-mobility transistor. Optoelectronics devices – photodiode, solar cell, photodetector, LED, semiconductor laser.